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> IRFD9120 1A, 100V p-channel power mosfet lot 20 4-dip
IRFD9120 1A, 100V p-channel power mosfet lot 20 4-dip
IRFD9120 1A, 100V P-Channel Power MOSFET by Harris Semiconductor
DESCRIPTION: The IRFD9120 is an advanced power MOSFET designed and tested to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. It is supplied in the 4-Pin dual-in-line plastic package.
* Single pulse avalanche energy rated
* SOA is power-dissipation limited
* Nanosecond switching speeds
* Linear transfer characteristics
* Maximum Power Dissipation: 1W
* Pricing is for a LOT of 20 parts.
