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> 3000PCS 2SC2714-y silicon npn transistor toshiba
3000PCS 2SC2714-y silicon npn transistor toshiba
Type: 2SC2714-Y , Silicon NPN Epitaxial Planar Type (PCT process)
High Frequency Amplifier Applications
FM, RF, MIX,IF Amplifier Applications
Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
Junction temperature Tj 125 C
Storage temperature range Tstg 55~125 C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
report and estimated failure rate, etc).
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 18 V, IE = 0 0.5 A
Emitter cut-off current IEBO VEB = 4 V, IC = 0 0.5 A
Reverse transfer capacitance Cre VCB = 6 V, f = 1 MHz 0.70 pF
Transition frequency fT VCE = 6 V, IC = 1 mA 550 MHz
Collector-base time constant Cc rbb VCE = 6 V, IE = 1 mA, f = 30 MHz 30 ps
VCE = 6 V, IE = 1 mA, f = 100 MHz,
